The 16nm FinFET node has introduced several new challenges in the IC design community. In addition to the complexity of power-noise and electromigration (EM) verification, thermal reliability has ...

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

imec has presented a tungsten (W) buried power rail (BPR) integration scheme in a FinFET CMOS test vehicle, which does not impact the CMOS device characteristics. Using this week's 2020 Symposia on ...

As the dimensions of devices scale down, the variations in the electrical parameters of CMOS transistors steadily increase. This is due to random fluctuations in the density of the dopants in the ...

Since the advent of semiconductors and throughout the long history of designing integrated circuits for everything from computer hardware to multifunction mobile devices, the basic tenet of Moore's ...