摘要:综述了后摩尔时代中两大发展热点:鳍式场效应晶体管(FinFET)纳电子学和基于量子计算新算法的量子芯片的发展历程和近两年的最新进展｡在FinFET纳电子学领域,综述并分析了当今Si基互补金属氧化物半导体(CMOS)集成电路的发展现状,包括FinFET的发展､10nm和7nm ...

Mentor, a Siemens business, today announced that several tools in its Calibre™ nmPlatform and Analog FastSPICE (AFS™) Platform have been certified on TSMC's 5nm FinFET process technology. Mentor also ...

时代发展的步伐不允许摩尔定律停滞，全社会的数字化转型、AI对算力的贪婪需求、自动驾驶技术突飞猛进，都要求半导体制造工艺持续更快速地迭代。这个时间节点之下的关键技术热点便是GAAFET（和chiplet）。但台积电和Intel仍将在3nm节点上使用FinFET晶体管，台 ...

FinFET称为鳍式场效应晶体管(Fin Field-Effect Transistor)，是由美籍华人科学家胡正明教授提出的，其中的Fin在构造上与鱼鳍非常相似，所以称为“鳍式”，而FET的全名是“场效电晶体” 。 FinFET是一种新的互补式金属氧半导体(CMOS)晶体管，源自于传统标准的晶体管 ...

FinFET(鳍式场效应晶体管)代表了半导体技术的一项革命性突破，与传统的平面MOSFET设计形成了显著区别。这种三维晶体管架构已成为现代半导体制造的基础，尤其是在器件尺寸不断缩小、性能和能效要求不断提升的背景下。O3Qednc FinFET技术的发展历程跨越数十年 ...

At this week’s IEEE IEDM 2018 conference, imec, the Leuven-based research and innovation hub has presented a first demonstration of 3D stacked FinFETs on 300mm wafers using a sequential integration ...

十多年前，FinFET的出现重新定义了芯片设计。虽然这些非平面晶体管仍然是非官方的行业标准，但它们的寿命可能已接近尾声··· 十多年前，FinFET的出现重新定义了芯片设计。虽然这些非平面晶体管仍然是非官方的行业标准，但它们的寿命可能已接近尾声。

May 1, 2018 -- Mentor, a Siemens business, has announced that several tools in its Calibre® nmPlatform and Analog FastSPICE (AFS™) Platform have been certified by TSMC for the latest versions of ...

The 40nm gate-pitch cliff, 3D SoCs with microfluidic cooling, new fan-outs and 2.5D—it’s all on the table. An Steegen, executive vice president of semiconductor technology and systems at Imec, sat ...

Imec has demo-ed 3D stacked FinFETs on 300mm wafers using a sequential integration approach with a 45nm fin pitch and 110nm poly pitch technology. The top layer consists of junction-less devices ...

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...