V (BR)DSS (sometimes called BVDSS) is the drain-source voltage at which no more than the specified drain current will flow at the specified temperature and with zero gate-source voltage. This tracks ...

Power MOSFET capacitance isn't a fixed value—it's a highly non-linear function of voltage that standard LCR meters struggle to capture accurately at operating biases. By combining the waveform ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Power demands of computing and telecom applications are driving rapid developments in semiconductor components for power conversion. By looking at next-generation microprocessor requirements — a ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...

One common question asked when considering what gate driver to use for an application is: what is the peak current that a driver can deliver? Peak current is one of the most important parameters in ...